1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, S. W.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorHou, Y. J.en_US
dc.contributor.authorLiu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:07:24Z-
dc.date.available2014-12-08T15:07:24Z-
dc.date.issued2010-02-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3313947en_US
dc.identifier.urihttp://hdl.handle.net/11536/5832-
dc.description.abstractWe have investigated the lasing characteristics of GaN-based two-dimensional photonic crystal surface emitting lasers (PCSELs) with different PC lattice constants by using angled resolved spectroscopy. Due to the Bragg diffraction theory, normalized frequency of lasing wavelength of PCSELs can be exactly matched with three distinct band-edge frequencies (Gamma 1, K2, and M3) in the photonic band diagram. The three band-edge frequencies (Gamma 1, K2, and M3) have different emission angles corresponding to the normal direction of the sample (0 degrees, 29 degrees, and 59.5 degrees).en_US
dc.language.isoen_USen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectphotonic crystalsen_US
dc.subjectsurface emitting lasersen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleLasing characteristics at different band edges in GaN photonic crystal surface emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3313947en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274758100008-
dc.citation.woscount6-
Appears in Collections:Articles


Files in This Item:

  1. 000274758100008.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...