Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers

Title:	Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
Authors:	Chen, S. W. Lu, T. C. Hou, Y. J. Liu, T. C. Kuo, H. C. Wang, S. C. 光電工程學系 Department of Photonics
Keywords:	gallium compounds;III-V semiconductors;photonic crystals;surface emitting lasers;wide band gap semiconductors
Issue Date:	15-Feb-2010
Abstract:	We have investigated the lasing characteristics of GaN-based two-dimensional photonic crystal surface emitting lasers (PCSELs) with different PC lattice constants by using angled resolved spectroscopy. Due to the Bragg diffraction theory, normalized frequency of lasing wavelength of PCSELs can be exactly matched with three distinct band-edge frequencies (Gamma 1, K2, and M3) in the photonic band diagram. The three band-edge frequencies (Gamma 1, K2, and M3) have different emission angles corresponding to the normal direction of the sample (0 degrees, 29 degrees, and 59.5 degrees).
URI:	http://dx.doi.org/10.1063/1.3313947 http://hdl.handle.net/11536/5832
ISSN:	0003-6951
DOI:	10.1063/1.3313947
Journal:	APPLIED PHYSICS LETTERS
Volume:	96
Issue:	7
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Appears in Collections:	Articles

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