Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers

doi:10.1063/1.3313947

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, S. W.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Hou, Y. J.	en_US
dc.contributor.author	Liu, T. C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:07:24Z	-
dc.date.available	2014-12-08T15:07:24Z	-
dc.date.issued	2010-02-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3313947	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5832	-
dc.description.abstract	We have investigated the lasing characteristics of GaN-based two-dimensional photonic crystal surface emitting lasers (PCSELs) with different PC lattice constants by using angled resolved spectroscopy. Due to the Bragg diffraction theory, normalized frequency of lasing wavelength of PCSELs can be exactly matched with three distinct band-edge frequencies (Gamma 1, K2, and M3) in the photonic band diagram. The three band-edge frequencies (Gamma 1, K2, and M3) have different emission angles corresponding to the normal direction of the sample (0 degrees, 29 degrees, and 59.5 degrees).	en_US
dc.language.iso	en_US	en_US
dc.subject	gallium compounds	en_US
dc.subject	III-V semiconductors	en_US
dc.subject	photonic crystals	en_US
dc.subject	surface emitting lasers	en_US
dc.subject	wide band gap semiconductors	en_US
dc.title	Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3313947	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	96	en_US
dc.citation.issue	7	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000274758100008	-
dc.citation.woscount	6	-
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