Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers

標題:	Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
作者:	Chen, S. W. Lu, T. C. Hou, Y. J. Liu, T. C. Kuo, H. C. Wang, S. C. 光電工程學系 Department of Photonics
關鍵字:	gallium compounds;III-V semiconductors;photonic crystals;surface emitting lasers;wide band gap semiconductors
公開日期:	15-二月-2010
摘要:	We have investigated the lasing characteristics of GaN-based two-dimensional photonic crystal surface emitting lasers (PCSELs) with different PC lattice constants by using angled resolved spectroscopy. Due to the Bragg diffraction theory, normalized frequency of lasing wavelength of PCSELs can be exactly matched with three distinct band-edge frequencies (Gamma 1, K2, and M3) in the photonic band diagram. The three band-edge frequencies (Gamma 1, K2, and M3) have different emission angles corresponding to the normal direction of the sample (0 degrees, 29 degrees, and 59.5 degrees).
URI:	http://dx.doi.org/10.1063/1.3313947 http://hdl.handle.net/11536/5832
ISSN:	0003-6951
DOI:	10.1063/1.3313947
期刊:	APPLIED PHYSICS LETTERS
Volume:	96
Issue:	7
結束頁:
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。