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dc.contributor.authorKuo, C. H.en_US
dc.contributor.authorChang, L. C.en_US
dc.contributor.authorKuo, C. W.en_US
dc.contributor.authorChi, G. C.en_US
dc.date.accessioned2014-12-08T15:07:24Z-
dc.date.available2014-12-08T15:07:24Z-
dc.date.issued2010-02-15en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2038595en_US
dc.identifier.urihttp://hdl.handle.net/11536/5837-
dc.description.abstractWe demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.en_US
dc.language.isoen_USen_US
dc.subjectInGaN-GaNen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectnanoen_US
dc.subjecttemplateen_US
dc.titleEfficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Templateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2009.2038595en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue4en_US
dc.citation.spage257en_US
dc.citation.epage259en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000275381000015-
dc.citation.woscount8-
Appears in Collections:Articles


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