Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

doi:10.1109/LPT.2009.2038595

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, C. H.	en_US
dc.contributor.author	Chang, L. C.	en_US
dc.contributor.author	Kuo, C. W.	en_US
dc.contributor.author	Chi, G. C.	en_US
dc.date.accessioned	2014-12-08T15:07:24Z	-
dc.date.available	2014-12-08T15:07:24Z	-
dc.date.issued	2010-02-15	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2009.2038595	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5837	-
dc.description.abstract	We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.	en_US
dc.language.iso	en_US	en_US
dc.subject	InGaN-GaN	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	nano	en_US
dc.subject	template	en_US
dc.title	Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2009.2038595	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	4	en_US
dc.citation.spage	257	en_US
dc.citation.epage	259	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000275381000015	-
dc.citation.woscount	8	-
顯示於類別：	期刊論文

文件中的檔案：

000275381000015.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。