雙氯雙亞胺基鉬錯合物之合成及化學氣相沉積反應

Abstract

本實驗成功合成出四個新的雙氯雙亞胺基鉬錯合物,並以雙比啶雙氯雙亞 胺基鉬錯合物為單源前驅物,經化學氣相沉積法成長薄膜.在前驅物氣化溫 度 353 K及沉積溫度 723-923 K條件下可成長出均勻緻密多晶薄膜.所得 薄膜利用掃描式電子顯微鏡,X光繞射儀,歐傑電子能譜儀,電子能譜儀( ESCA),波長發散光譜儀作定性及定量組成鑑定.反應過程中所產生之低沸 點產物以殘餘氣體分析儀及氣相層析質譜儀偵測,並加以推測反應之反應 機構. dichlorodipyridylbis(imido) molybdenum,dichloro- (2,2'-dipyridyl)bis(imido) molybdenum, dichloro(dimethyl- ethylamine)bis(imido) molybdenum and dichloro(triethyl- amine) bis(imido) molybdenum were successfully synthesized. dichlorodipyriylbis(imido) molybdenum was used as a single- source precusor to deposite thin films by low pressure MOCVD. Deposition of uniform polycrystalline thin films on substrates was carried out at temperature 723-923 k in cold reactor, while the precusor was vaporized at 353 K.Bulk elemental composition of the thin films, studies by WDS, is best described as MoCxNy (X=0.03-0.60; y=0.32-0.85). XRD studies showed that the films have cubic phase with the lattice parameter a=0.416-0.420 nm. ESCA showed the binding energies of the Mo 3d5/2, Mo3d3/2 and N 1s electron were 228.0, 231.0 and 396.6 eV, repectively. Volatile products were indentified by GC-MS and RGA. Possible reaction pathways are proposed.