Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

doi:10.1109/LPT.2009.2037727

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DC 欄位	值	語言
dc.contributor.author	Lin, Wei-Hsun	en_US
dc.contributor.author	Tseng, Chi-Che	en_US
dc.contributor.author	Chao, Kuang-Ping	en_US
dc.contributor.author	Mai, Shu-Cheng	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.contributor.author	Wu, Meng-Chyi	en_US
dc.date.accessioned	2014-12-08T15:07:24Z	-
dc.date.available	2014-12-08T15:07:24Z	-
dc.date.issued	2010-02-15	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2009.2037727	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5841	-
dc.description.abstract	Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP.	en_US
dc.language.iso	en_US	en_US
dc.subject	Quantum-dot infrared photodetectors (QDIPs)	en_US
dc.title	Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2009.2037727	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	4	en_US
dc.citation.spage	227	en_US
dc.citation.epage	229	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000275381000005	-
dc.citation.woscount	0	-
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