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dc.contributor.authorWu, K. H.en_US
dc.contributor.authorGou, I. C.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorChen, C. K.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorChen, J. M.en_US
dc.date.accessioned2014-12-08T15:07:27Z-
dc.date.available2014-12-08T15:07:27Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2009.09.089en_US
dc.identifier.urihttp://hdl.handle.net/11536/5875-
dc.description.abstractWe have deposited the c-axis-oriented orthorhombic TbMnO(3) (o-TMO) films with well-aligned in-plane orientations on NdGaO(3) (001) substrates by using pulsed laser deposition. The distinctive orientation alignments between the film and substrate allow the study of the X-ray absorption spectroscopy (XAS) with the electric field along three major crystallographic directions, respectively. Polarization-dependent XAS spectra show significant anisotropy in the electronic Structure of o-TMO. The correlation between the electronic structure, the bonding anisotropy, and the magnetoelectric effect in the multiferroic materials is revealed. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic electronic structure in single crystalline orthorhombic TbMnO(3) thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2009.09.089en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.issue8en_US
dc.citation.spage2275en_US
dc.citation.epage2279en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
Appears in Collections:Articles