平面型約瑟芬弱連接元件之製備與研究

Abstract

將詳細報告平面型約瑟芬元件的製備程序與量測結果。首 鍍膜法，成功 地在NdGaO3基板上製備出c軸取向的超導－絕緣材料－超導（YBCO/PBCO/ YBCO）多層膜結構。這個層狀結構構成了元件 紫菕A我們將多層膜做成大 小為200μm×200μm的元件。量測 犒q流與電壓特性曲線與RSJ模型預測 的型態相似；加入微波 ]會出現微波感應台階。這些現象證明了元件的弱 連接性質。 s了（103）晶軸取向YBCO薄膜的各向異性，並評估將這類薄 膜運用在元件製作上的可行性。 We have fabricated sandwich SIS (superconductor / insulator / junctions using c-axis oriented YBCO / PBCO / YBCO trilayerin- situ by laser ablation. Under optimal deposition conditions, theures were well oriented with c-axis perpendicular to the substrates. Theerature (Tc) of the top layer of YBCO films were above 89K. The planer-typely exhibit the typical RSJ-like current-voltage characteristics anded voltage steps, indicative of clear manifestations of Josephsonsotropic electrical properties of YBCO(103) films were also studied in