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dc.contributor.author吳建華en_US
dc.contributor.authorJanne-Wha Wuen_US
dc.contributor.author張俊彥,張 翼en_US
dc.contributor.authorChun-Yen Chang, Edward Yi Changen_US
dc.date.accessioned2014-12-12T02:13:38Z-
dc.date.available2014-12-12T02:13:38Z-
dc.date.issued1994en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT830430021en_US
dc.identifier.urihttp://hdl.handle.net/11536/59205-
dc.description.abstract在本論文中完成了以有機金屬化學氣相沉積法研製磷化銦鎵為基材之異質 接面雙載子電晶體。內容包含以有機金屬化學氣相沉積法成長磷化銦鎵磊 晶層、對磷化銦鎵傳輸特性作蒙地卡羅模擬，並實際製作以磷化銦鎵為基 材之高頻異質接面雙載子電晶體。在異質接面磊晶成長過程中，氣體切換 的過程會影響異質接面的特性。以雙晶Ｘ射線繞射法觀察磷化銦鎵╱砷化 鎵多層結構可以提供一簡單方法觀察氣體切換對異質接面之影響。 This dissertation presents a GaInP-based heterojunction bipolar transistor (HBT). The whole work includes epitaxy of metalorganic chemical vapor deposition, investigation of transport property of GaInP by Monte Carlo method and fabrication of high frequency HBTs. A way to investigate the influence of gas switching on the heterointerface is discussed. It uses double crystal x-ray diffraction method to analyze a GaInP/GaAs multilayers' structure.zh_TW
dc.language.isoen_USen_US
dc.subject有機金屬化學氣相沉積法, 異質接面雙載子電晶體, 磷化銦鎵zh_TW
dc.subjectMOCVD, HBT, GaInPen_US
dc.title以有機金屬化學氣相沉積法研製異質接面雙載子電晶體zh_TW
dc.titleThe Study of Heterojunction Bipolar Transistor by Metalorganic Chemical Vapor Phase Depositionen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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