分子束磊晶成長低溫砷化鎵與相關化合物半導體及其元件應用

Abstract

本論文主要針對以分子束磊晶成長低溫砷化鎵與相關化合物半導及其元件 應用作一深入及系統性的探討. 我們成功的發展出兩種方法來控砷在退火 後低溫材料中的析出. 利用這些方法, 我們能夠控制低溫材料經過退火後 的光, 電, 及微結構特性. 在(3 11) 晶面上成長的低溫砷化鎵中, 我們 獲得到目前為止所知最短的載子生命期. 除此之外, 我們也探討了成長溫 度對調變參雜光偵測器特性的影響. 在能量低於能隙的範圍, 元件響應隨 著成長溫度的降低而增加. 頻譜響應呈現多通模式. 這些結果將對低溫材 料的基礎研究及應用提供重要的資訊. This dissertation presents a systematic study of GaAs and relatived compounds grown by molecular beam epitaxy at low substrate temperature and their device applications. We have developed two methods to control the As precipitates in post- growth annealed low-temperature materials. By these methods, we could control the electrical, optical, and structural properties of low-temperature-grown materials. On the (311) substrate , we obtained the shortest carrier lifetime in low- temperature GaAs. In addition, in this dissertation, we also study the growth temperature effect on the performance of modulation-doped photodetectors. The responsivity below band gap is improved for reduced growth temperatures. The spectral response shows multi-modes. These results provide new informations for the study of low-temperature -grown materials.