微弱反置金氧半電晶體之背閘偏壓及溫度效應之精確模式化

Abstract

在這篇論文中,提出一個單純且計算精確的模型可以用來描述現代金氧半 電晶體操作在次臨界區域時, 汲極電流對閘極, 汲極與背閘極偏壓之間的 直流特性。這個模型只包含有四個參數, 沒有複雜的數學式子, 因此適用 於電路分析、設計。這個模型由兩家製造廠商提供的測試電晶體量測驗證 後, 證實在相當範圍的溫度及偏壓條件下, 由其是背閘偏壓不為零的情形 下, 比起現有傳統者較能正確重現次臨界區之量測特性。 A simple and accurate model describing the dc behavior of MSOFET operated in weak inversion is derived empirically based on the physically-based formulation. This model includes only four parmeters and is suitable for circuit design. It is extensively verified experimentally over a wide range of bias condition and temperature for different NMOSFET test transitors fabricated by two different CMOS process. This new model has exhibited better ability than the existing ones in accurately reporducting the effects of temperature and back- gate bias on the subthreshold I-V characteristics.