複晶矽射極雙載子電晶體之熱載子衰退的分析

Abstract

本論文詳細分析自動對準與非自動對準的複晶矽射極雙載子電晶體之衰退 行為，其中實驗分析方法包括電晶體基、射極間的定電壓及定電流測試、 測試時間高達一萬秒以上。同時提出一完整的物理模式，考慮了比率方程 式、回復過程、復合過程、電子捕獲及電洞捕獲等物理現象，可用來解釋 所有在熱載子衝擊期間的衰退行為。 In this work, the degradation behaviors of the fabricated self- aligned and non-self-aligned poly-emitter bipolar transistors have been characterized. A complete physical model considering the rate equation, the healing process, the recombination process, the electron oxide-traps, and the hole traps, has been proposed to explain all kinds of the degradation behaviors due to the hot-carrier stress.