氫化微晶矽射極異質接面電晶體的研製

Abstract

本文主旨在闡述N型氫化微晶矽射極異質接面電晶體的製造與實驗結果。 藉著這種具有特殊低電阻值的寬能隙材料當作異質射極，以期能壓制少數 載子的回流注入效應，而使用低基極電阻值的重參雜基極。元件不但能改 善電流的增益，並且有能力去設計高速度的微波電路。我們設計各種不同 的射極面積的元件，並且分析其參數變化的不同點。這些測量值將可用於 高速度、高率微波電路的基本製造流程中，以便作深一層的研究。結果顯 示，射極面積愈大，電阻愈小，漏電流愈大，而電流增益愈小。在集極電 流為3.85mA時，得到最大的電流增益為28。 This thesis presents the fabrication and experimental results of a silicon heterojunction bipolar transistor with an n+ uc- Si:H emitter. By employing the wide gap emitter (1.5 to 1.9 eV) in which we could expect low specific resistance as the hetero- emitter material to suppress minority carrier back injection efficiency, the use of heavy base doping to lower base resist- -ance can be realized. The device will be not only to obtain current gain improvement, but also the ability of designing of microwave circuits with high speed. We design the device with various emitter area and different geometry in order to analyze the differences caused by the parameter variations. The measuring data will be applied to an improved design using the basic fabricated process in the field of high frequency and high speed microwave circuits. The results show that large emitter area will result in low resistance, low current gain and high leakage current. Maximum current gain of 28 is obtained at a collector current of 3.85 mA.