1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorWu, Yu-Shengen_US
dc.contributor.authorFan, Ming-Longen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:07:33Z-
dc.date.available2014-12-08T15:07:33Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2037247en_US
dc.identifier.urihttp://hdl.handle.net/11536/5940-
dc.description.abstractThis letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.en_US
dc.language.isoen_USen_US
dc.subjectLine edge roughness (LER)en_US
dc.subjectMOSFETen_US
dc.subjectrandom dopant fluctuation (RDF)en_US
dc.subjectswitching time (ST)en_US
dc.titleInvestigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approachen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2037247en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue2en_US
dc.citation.spage162en_US
dc.citation.epage164en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000274018000024-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000274018000024.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...