Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach

doi:10.1109/LED.2009.2037247

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Yu-Sheng	en_US
dc.contributor.author	Fan, Ming-Long	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:07:33Z	-
dc.date.available	2014-12-08T15:07:33Z	-
dc.date.issued	2010-02-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2037247	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5940	-
dc.description.abstract	This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.	en_US
dc.language.iso	en_US	en_US
dc.subject	Line edge roughness (LER)	en_US
dc.subject	MOSFET	en_US
dc.subject	random dopant fluctuation (RDF)	en_US
dc.subject	switching time (ST)	en_US
dc.title	Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2037247	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	2	en_US
dc.citation.spage	162	en_US
dc.citation.epage	164	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000274018000024	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

文件中的檔案：

000274018000024.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。