標題: Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs
作者: Lu, Ching-Sen
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: In this work, we investigate the effect of precursor flow conditions on the properties of the SiN film deposited by PECVD, and the related impacts on the device performance as well as hot-carrier reliability of NMOSFETs. We found that SiN film with higher nitrogen content possess larger tensile stress and thus higher on-current. Moreover, lower hydrogen contained in the SiN boosts the immunity to hot-carrier stress. Both demands can be fulfilled by increasing the N(2) gas flow rate during SiN deposition. The lateral distribution of interface state generation after hot-carrier stress was also investigated.
URI: http://hdl.handle.net/11536/5946
ISBN: 978-1-4244-0636-4
期刊: EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS
起始頁: 117
結束頁: 120
Appears in Collections:Conferences Paper