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dc.contributor.authorHsieh, Ming-Fengen_US
dc.contributor.authorCheng, Jen-Yinen_US
dc.contributor.authorYang, Jenq-Chengen_US
dc.contributor.authorLin, Deng-Sungen_US
dc.contributor.authorMorgenstern, Karinaen_US
dc.contributor.authorPai, Woei-Wuen_US
dc.date.accessioned2019-04-03T06:38:07Z-
dc.date.available2019-04-03T06:38:07Z-
dc.date.issued2010-01-15en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.81.045324en_US
dc.identifier.urihttp://hdl.handle.net/11536/5960-
dc.description.abstractThis study investigates the surface chemistry and the ordering characteristics of coadsorbed hydrogen and chlorine atoms, generated by the exposure of the Si(100) surface to gas-phase HCl molecules at various substrate temperatures, by scanning tunneling microscopy (STM), core-level photoemission spectroscopy, and Monte Carlo simulation. Experimental results show that saturation exposure to HCl causes all surface dangling bonds to be terminated by the two fragments H and Cl atoms and that the number of H-terminated sites exceeds that of Cl-terminated ones by more than 10%. This finding suggests that, in addition to the dominant dissociative chemisorption, atomically selective chemisorption or atom abstraction occurs. STM images reveal that some Cl-terminated sites form patches with a local 2 x 2 structure at 110 K and that the degree of ordering is reduced as the substrate temperature increases. Results of Monte Carlo simulations demonstrate the importance of including dissociative fragment-adsorbate interactions during the random adsorption of diatomic molecules. Comparing the correlations between Cl-terminated sites identified from STM images and those predicted by simulation reveals two effective interaction energies of 8.5 +/- 2.0 and 3.5 +/- 2.0 meV between a dissociative fragment Cl atom and a nearest neighboring Cl adsorbates in the same dimer row and in the adjacent row, respectively.en_US
dc.language.isoen_USen_US
dc.titleDetermination of dissociative fragment-adsorbate interaction energy during chemisorption of the diatomic molecule HCl on Si(100)en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.81.045324en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume81en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000277186000009en_US
dc.citation.woscount7en_US
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