標題: Field emission characteristics of carbon nanotubes post-treated with high-density Ar plasma
作者: Wang, Wen-Pin
Wen, Hua-Chiang
Jian, Sheng-Rui
Cheng, Huy-Zu
Jang, Jason Shian-Ching
Juang, Jenh-Yih
Cheng, Huang-Chung
Chou, Chang-Pin
機械工程學系
電子物理學系
Department of Mechanical Engineering
Department of Electrophysics
關鍵字: Multi-walled carbon nanotube;Scanning electron microscopy;Field emission property;Transmission electron microscopy
公開日期: 15-一月-2010
摘要: The field emission characteristics of carbon nanotubes (CNTs) grown by thermal chemical vapor deposition (CVD) and subsequently surface treated by high-density Ar plasma in an inductively coupled plasma reactive ion etching (ICP-RIE) with the various plasma powers were measured. Results indicate that, after treated by Ar plasma with power between 250 and 500 W, the emission current density of the CNTs is enhanced by nearly two orders of magnitude (increased from 0.65 to 48 mA/cm(2)) as compared to that of the as-grown ones. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to investigate the structural features relevant to the modified field emission properties of CNTs. The SEM images of CNTs subjected to a 500 W Ar plasma treatment exhibit obvious damages to the CNTs. Nevertheless, the turn-on fields decreased from 3.6 to 2.2V/mu m, indicating a remarkable field emission enhancement. Our results further suggest that the primary effect of Ar plasma treatment might be to modify the geometrical structures of the local emission region in CNTs. In any case, the Ar plasma treatment appears to be an efficient method to enhance the site density for electron emission and, hence markedly improving the electric characteristics of the CNTs. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2009.09.070
http://hdl.handle.net/11536/5965
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.09.070
期刊: APPLIED SURFACE SCIENCE
Volume: 256
Issue: 7
起始頁: 2184
結束頁: 2188
顯示於類別:期刊論文


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