統計資料
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| 檢視 | |
|---|---|
| Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement | 104 |
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| 檢視 | |
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| Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement | 104 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 90 |
| 美國 | 14 |
| 檢視 | |
|---|---|
| Shenzhen | 90 |
| Kensington | 6 |
| Menlo Park | 6 |
| Edmond | 1 |
| University Park | 1 |