具有雙 攙雜通道的假晶砷化鋁鎵/砷化銦鎵功率高電子遷移率電晶體之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	陳祖光	en_US
dc.contributor.author	Chen, Zu Guang	en_US
dc.contributor.author	張翼	en_US
dc.contributor.author	Zhang, Yi	en_US
dc.date.accessioned	2014-12-12T02:14:12Z	-
dc.date.available	2014-12-12T02:14:12Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT832159015	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59680	-
dc.language.iso	en_US	en_US
dc.title	具有雙攙雜通道的假晶砷化鋁鎵/砷化銦鎵功率高電子遷移率電晶體之研究	zh_TW
dc.title	The study of pseudomorphic AlGaAs/InGaAs power HEMT with dual -doped channels	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
顯示於類別：	畢業論文