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dc.contributor.authorShu, G. W.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorHsiao, R. S.en_US
dc.contributor.authorChen, J. F.en_US
dc.contributor.authorLin, T. Y.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorHuang, Y. H.en_US
dc.contributor.authorYang, T. N.en_US
dc.date.accessioned2014-12-08T15:07:34Z-
dc.date.available2014-12-08T15:07:34Z-
dc.date.issued2010-01-15en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2009.09.028en_US
dc.identifier.urihttp://hdl.handle.net/11536/5971-
dc.description.abstractPhotoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInAsen_US
dc.subjectQuantum dotsen_US
dc.subjectPhotoluminescenceen_US
dc.titlePhotoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2009.09.028en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSen_US
dc.citation.volume166en_US
dc.citation.issue1en_US
dc.citation.spage46en_US
dc.citation.epage49en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000273423500009-
dc.citation.woscount3-
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