標題: Electron Field Emission Properties of Nanomaterials on Rough Silicon Rods
作者: Wu, Hung-Chi
Tsai, Tsung-Yen
Chu, Fu-Hsuan
Tai, Nyan-Hwa
Lin, Heh-Nan
Chiu, Hsin-Tien
Lee, Chi-Young
應用化學系
Department of Applied Chemistry
公開日期: 14-一月-2010
摘要: Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs) were formed via a modified electroless metal deposition (EMD) approach. Despite inheriting the length of crowded silicon nanowires (NWs) obtained by the conventionally adopted EMD method, the r-SiRs are distributed sparsely, subsequently forming an excellent field emitter substrate. The electron field emission (EFE) of carbon nanotubes (CNTs) grown on r-SiRs can be turned on at (E(0))(CNTs/r-SiRs) = 2.3 V/mu m, yielding a high EFE current density, (J(c))(CNTs/r-SiR) = 3.7 mA/cm(2) in an applied field of 5.1 V/mu m, Additionally, a cactuslike structure consisting of zinc oxide NWs on r-SiRs can be turned on at 2.9 V/mu m. The absence of a high-temperature or expensive photolithographic process makes r-SiRs a promising alternative as a silicon base field emitter substrate.
URI: http://dx.doi.org/10.1021/jp908566q
http://hdl.handle.net/11536/5974
ISSN: 1932-7447
DOI: 10.1021/jp908566q
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 114
Issue: 1
起始頁: 130
結束頁: 133
顯示於類別:期刊論文


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