單與雙波長注入鎖模高功率半導體雷射之研究

Abstract

我們以利用一波長可調外腔式半導體雷射產生波長可調的單波長與雙 波長輸出為主雷射光源, 分別注入一市售的寬面積高功率半導體雷射, 研 究其注入鎖模的特性. 實驗結果顯示, 利用單波長光做注入鎖模時, 我們可將一多模高功率半導體雷射鎖模成一單波長高功率半導體雷射, 並 同時放大了單波長雷射光的功率, 且仍保有波長可調的特性. 當放大率 為13.71dB 時, 波長可調範圍有4nm , 當放大率提高到19.32dB 時, 波長 可調範圍則為0.8nm . 以雙波長光做注入鎖模時, 我們也可產生一雙波長 高功率半導體雷射, 並同時放大雙波長光的功率, 另外也保持其波長可調 的特性. 當放大率為13.56dB 時, 雙波長可調範圍為2.4nm. 我們從一 簡單的多模半導體雷射速率方程式出發, 我們可模擬產生單與雙波長注入 鎖模的現象, 包括不同鎖模狀況下波長可調範圍的變化. 此模擬結果與實 驗結果在定性上是相符合的. We have studied the performance an injection-locked high- power broad-areasemicomductor laser diode. The master is a homemade, wavelength tunable, external-cavity laser diode with either single or dual-wavelength output. The experimental results reveal that single-wavelength injection-locking has been successfully demonstracted in the aforementioned laser diode by using a single-wavelength master laser. The output power of the master lasercan be amplifiedwhile retaining the flexbility of wavelength-tunning. Thewavelength tunning range are 4nm and 0.8nm at an amplication ratio of 13.71dBand 19.32dB, respective. Similar characteristics have also been observed ifwe utilize a dual-wavelength master lser as a injection source. The tunning range of the slave laser is 2.4nm at amplication ratio of 13.56dB. We have also simulated the evolution of the injection-locking process for single or dual-wavelength operation. In particular, we have focused on the variation of the wavelength tunning range under different conditions. Simulation results are qualitatively in good agreements with the experiment.