利用脈衝式雷射蒸鍍法製成硒化錳鋅薄膜及其特性的研究

Abstract

In this work, the wide band gap II-VI semiconductor ZnSe thin films (witha direct-type band gap of 2.7 eV at room temperature) and the diluted magnetic semiconductor ZnMnSe thin films were deposited onto substrates by the pulsed laser evaporation (PLE) technique. We controlled the deposition conditions, for example, the substrate temperature, the period of in-situ post annealing and the different kind of substrate during the deposition process. By the X-ray diffraction (XRD) measurement, the structure and crystallization of the ZnSe thin films were analyzed. The Raman spectroscopy wasused to study the lattice vibration and optical phonon property of ZnSe thin films. Additionally, we also studied the surface morphology by using the scanning electron microscope (SEM) and the atomic force microscope (AFM). 本研究係利用脈衝式雷射蒸鍍法製成寬能隙的II-VI族半導體--硒化 鋅薄膜,並加入磁性材料錳元素製成稀磁性半導體--硒化錳鋅的薄膜. 我 們在鍍膜的過程之中,控制不同的加熱溫度,退火溫度和時間等鍍膜條件以 及選擇不同的基板類型,製成硒化鋅及硒化錳鋅薄膜,並研究其特性. 藉由 X-ray繞射,我們分析了製成的硒化鋅薄膜之方向結構及結晶性,利用拉曼 光譜則可研究薄膜的晶格振動及光學聲子性質,並以阿爾發-stepper來測 量薄膜的厚度. 此外我們也利用掃描式電子顯微鏡以及原子力顯微鏡來分 析薄膜的表面形態.