我國積體電路產業競爭因索分析-以動態隨機存取記憶體為例之研究

Abstract

本研究主要目的在於從市場、技術、資源、政府政策及相關產業等五方面 分析我國IC-DRAM之競爭因素，歸納出其強處、弱處、機會、威脅並佐以 問卷及專家訪問對子因素作權重比較以分析未來趨勢等，作為策略研擬之 基礎，供廠商及政府相關部門參考。本研究之結論可歸納如下：(1)技術 與市場面為DRAM產業之策略方向，且成本領導為因應市場快速變化之重要 策略。(2)微影技術為DRAM製程技術上主要的突破點，而提昇良率及縮小 晶方乃DRAM製造技術之重點。(3)資訊工業如PC為DRAM市場最主要之影響 因素。(4)策略聯盟為DRAM技術取得之最有效方法。(5)水力、電力及科技 人力乃為未來進一步發展之主要資源。(6)IC設備工業為IC支援產業中最 重要之一環。(7)策略工業之訂定及科學園區之建立為將來DRAM發展之重 要政府政策。 The main thrust of this research is to analyze thecompetitive factors from the pointviews of market, technology, governmentpolicy, resources and supporting industry;in addition, to analyze itsstrengths, weaknesses, opportunities and threats. With the help ofquestionaires & expert interviews to weigh the sub-factors, its ultimateaim is to forecast the future trends as the basis of strategy planningfor private enterprise & government. The conclusions of this study are:(1) Technology and market are the strategic directions in the DRAMindustry; cost leading is the most important strategy for rapid market change.(2) Lithography is the primary breakthrough point of DRAM process technology;improving yields and shrinking chip size are the main methods in DRAMmanufacturing technology.(3) Information Industry such as the PC is the mostingluential factor in the future DRAM market. (4) Strategic Alliance is themost effective way for DRAM technology acquirement.(5) Water, electricityand technical manpower are the critical resources for future development.(6) The IC equip ment industry is the most significant among DRAM supportingindustries.(7) Strategic industry planning and the establishment ofscience-based industrial parks are the most important government policyfor DRAM development.