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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChiu, Chin-Huaen_US
dc.contributor.authorChao, Chu-Lien_US
dc.contributor.authorTu, Chia-Chengen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:07:40Z-
dc.date.available2014-12-08T15:07:40Z-
dc.date.issued2010en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/6033-
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.105501en_US
dc.description.abstractIn this study, a high-performance GaN-based light-emitting diode (LED) was achieved using a nanocolumn patterned sapphire substrate (NCPSS) with low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The surface roughness was evaluated by atomic force microscopy (AFM). The mechanisms of carrier localization in the GaN-based LED fabricated on NCPSS were discussed referring to the results obtained from the power-dependent photoluminescence measurements. Moreover, from the transmission electron microscopy (TEM) image, the threading dislocation densities (TDDs) through the GaN-based LED fabricated on NCPSS were found to be about 10 times lower than those fabricated on planar substrates. Finally, the internal quantum efficiency (IQE) of the GaN-based LED fabricated on NCPSS was as high as 48% at 30 mW, corresponding to a current of 20 mA, which is higher than that of a GaN-based LED fabricated on a planar sapphire substrate by 8%. The use of NCPSS is suggested to be effective for elevating the emission efficiency of the GaN-based LED owing to an improvement in crystal quality. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleImprovement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowthen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.105501en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue10en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000283142900052-
dc.citation.woscount3-
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