標題: Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
作者: Huang, Hung-Wen
Lin, Chung-Hsiang
Huang, Zhi-Kai
Lee, Kang-Yuan
Yu, Chang-Chin
Kuo, Hao-Chung
光電工程學系
Department of Photonics
公開日期: 2010
摘要: GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 x 350 mu m(2), our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6037
http://dx.doi.org/10.1143/JJAP.49.022101
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.022101
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 2
Appears in Collections:Articles


Files in This Item:

  1. 000275665700029.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.