Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 李奇霖 | en_US |
dc.contributor.author | Lee, Chyi-Lin | en_US |
dc.contributor.author | 李威儀 | en_US |
dc.contributor.author | Wei-I Lee | en_US |
dc.date.accessioned | 2014-12-12T02:15:26Z | - |
dc.date.available | 2014-12-12T02:15:26Z | - |
dc.date.issued | 1995 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT840429005 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/60565 | - |
dc.description.abstract | 高效率的太陽電池可以應用於太空通訊衛星與地表發電 上,作為一種乾淨、自然的能源,因為砷化鎵材料具有直接能隙,而且其能 隙寬度又適合製作高轉換效率的太陽電池,因此在本論文之中,將針對砷化 鎵太陽電池做一研究,以研製出高轉換效率的太陽電池。 在本論文之中利用影樣反轉的微影成形技術來製作高效率太陽電池,改善 太陽電池的柵狀電極對太陽電池的遮蔽率,也提昇了太陽電池的充填因子, 因此提昇了太陽電池的轉換效率。同時本論文中也利用高-低接面的模型 對太陽電池做理論的模擬分析,以便了解改變不同太陽電池結構參數時,對 太陽電池的影響。另外也組裝了一套光譜響量測系統 ,透過光譜響應量測 系統可以了解太陽電池不同部份對光的吸收效益,這些研究都可以作為設 計太陽電池時的依據。 在本論文中,並實際製作出在未 加抗反射層、AM1、一個太陽的照光條件下,轉換效率高達15.6%的砷化鎵 太陽電池,預計加上抗反射層後效率將可增加2~3%,其轉換效率就可以接 近18%。 High efficiency solar cells can be applied on space satellites and power plants. GaAs solar cells is a good choice forhigh efficiency solar cell. In this research we will discuss thefabrication and theory simulation analysis of high- efficiency GaAssolar cells. In this research the method of image reversal is usedto produce the top contact of GaAs solar cells. Because of the image reversal technique, the width of fingers can be reduced from 400 □m to 20 □m. So the lateral resistance can be reduced and the fill factor will be improved. In this article we use the low-high junction model to analyze the GaAs solar cell. From the simulation how the structure parameter affect the solar cells preformance can be understood. So wecan use this result to design our solar cells. Moreover a spectral response system is established. From this system the quantum efficiency for all solar cell components can be investigated. We also successfully demonstrate a 15.6% GaAs solar cell.This efficiency is measured under AM1, one sun and without AR coating.We expect that if AR coating is used on the solar cell, the efficiency will increase by 2~3% and reach about 18%. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 太陽電池 | zh_TW |
dc.subject | 砷化鎵 | zh_TW |
dc.subject | 理論模擬 | zh_TW |
dc.subject | 太陽能 | zh_TW |
dc.subject | 高-低接面 | zh_TW |
dc.subject | Solar Cells | en_US |
dc.subject | GaAs | en_US |
dc.subject | Solar Cell Simulation | en_US |
dc.subject | Solar Energy | en_US |
dc.subject | Low-High Junction | en_US |
dc.title | 高效率砷化鎵GaAs太陽電池之製作與理論模擬分析 | zh_TW |
dc.title | Fabrication and Simulation Anaylsis of High Efficiency GaAs Solar Cells | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子物理系所 | zh_TW |
Appears in Collections: | Thesis |