Full metadata record
DC FieldValueLanguage
dc.contributor.author顏瑞常en_US
dc.contributor.authorYan, Ruey-Charngen_US
dc.contributor.author李明知, 張振雄en_US
dc.contributor.authorMing-Chih Lee, Chen-Shiung Changen_US
dc.date.accessioned2014-12-12T02:15:28Z-
dc.date.available2014-12-12T02:15:28Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT840429031en_US
dc.identifier.urihttp://hdl.handle.net/11536/60594-
dc.description.abstract本文主要討論不同熱處理條件下之AgGaS2單晶結構及特性.由於配料時 多添加了一個重量百分比的硫,依此配料比例所得之AgGaS2 從液相冷卻到 固相時多餘的Ga2S3便以析出物在 晶體內部析出. 形成散射中心嚴重影 響光學性質. 本實驗針對 Ag2S 、Ag 、AgGaS2 粉末 、Ga、S等五種不 同熱處理條件做一系列的檢測,期得到最好的晶體品質.我們發現Ag2S為 最好的熱處理條件. In this study we disscuss the structure and characteristics of AgGaS2 single crystal under different annealing conditions. Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3 besides the phase of AgGaS2 is easily to be form ed as the precipitate during solidification. These precipitate need to be remo ved by thermal annealing ,otherwisethey will form the absorption centers and affect the optical propertiesof crystal seriously. In our experiment , we focus on five different thermal annealing conditions, such as to use materials of A g2S 、Ag、AgGaS2powder、Ga and S to obtain a crystal of better quality. we find that a betterquality of crystal can be obtain by annealing the crystal at tem peratureof 930C for 7 days under gas ambient of Ag2S.zh_TW
dc.language.isozh_TWen_US
dc.subject單晶zh_TW
dc.subject熱處理zh_TW
dc.subject銀鎵硫zh_TW
dc.subjectsingle crystalen_US
dc.subjectannealen_US
dc.subjectAgGaS2en_US
dc.title不同熱理條件下之 AgGaS2 單晶結構及特性研究zh_TW
dc.titleStudies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditionsen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis