銅化學氣相沉積之基本性質與選擇性沉積之研究

Abstract

銅具有低的電阻係數及優異的抗電子遷移特性, 已被認為是可能取代現 行鋁系導線成為下一代積體電路連線的材料. 本論文主要在於研究銅化學 氣相沉積的基本性質以及選擇性的沉積技術. 本研究以一種液態有機金 屬複合體 Cu(hfac)TMVS 作為銅源來作銅化學氣相沉積,並且以成長溫 度.壓力為變因, 探討銅化學氣相沉積的活化能,以及銅膜的電阻率.附著 力.表面形態等性質與變因之關係. 此外, 本研究也探討選擇性沉積之成 長機制以及可能達成選擇性沉積之變因的調查, 並且在刻有1.2微米管洞 的基板上作驗證, 最後並以反應過程中電子轉移的機制來解釋選擇性沉 積. Copper has an excellent electrical conductivity as well as electromigrationresistance. It has been regarded as a potential conductor material to replacethe aluminum based interconnect system for the future deep submicron integrated circuits. This thesis studies the basic characteristics as well asthe selective technique of the copper chemical vapor deposition (Cu CVD). A liquid metalorganic compound of Cu(hfac)TMVS is used as the precursor forthe study od Cu CVD. The first part of this thesis studies the basic characteristics of Cu CVD including the activation energy, film resistivity, adhesion and morphology in terms of two important parameters of depositionpressure and temperature. The second part of the thesis studies the selectiveprocessing window was investigated and the selective Cu deposition was made on1.2 micron meter W via patterned substrate. Furthermore, we try to explain the selective deposition by the electron transfer scheme during the deposition.