以交流磁控濺鍍成長介電薄膜與薄膜基本特性之研究

Abstract

鈦酸鍶鋇具備下列優點: 高介電常數,低漏電流 ,高製程缺陷的抵抗性, 好的電性,熱穩定性及低損耗因子. 本論文以交流磁控濺鍍的方法成長鈦 酸鍶鋇薄膜, 針對不同的基座溫度與薄膜厚度來探討其電性與物性, 我們 還發現鈦酸鍶鋇薄膜濺鍍在氧化鎂(100)基板上時顯示鈦酸鍶鋇 (100)優 選方向的成長. 此外,我們還以交流濺鍍的方試來濺鍍二氧化鈰薄膜, 在 這篇論文中我們證實了在二氧化鈰薄膜與矽基板之間存在了一層非晶型氧 化層, 並且由我們測得的電流電壓曲線我們發現了二氧化鈰的傳導機制與 空間電荷箝制電流的模型極度配合,其漏電流與所施加的偏壓成六次方關 係比. The BaxSr1-xTiO3 (BST) film has attracted great attention due to its high dielectric constant, low leakage current, sesistance to process induced damage, good thermal stability and low dissipation factor. In this study,we present the physical and electrical properties of BST films deposited byrf magnetron sputtering. The effect of the deposition temperature and the film thickness on the physical and electrical properties of the films on various substrates were investigated. We found that the BST films depositedon MgO(100) substrate possess ( 100) preferred orientation growth. On the other hand, we report the growth of cerium dioxide film on siliconby on-axis magnertron sputtering. An amorphous silicon dioxide layer isobserved between the cerium dioxide film and the silicon substrate. The electric conduction of the films is well-fitted by a power-law relation on the basis of the measured results of leakage current vs. applied voltage.