CMOS low-noise amplifier for mode-C & mode-D MB-OFDM UWB wireless receiver

Full metadata record

DC Field	Value	Language
dc.contributor.author	Huang, Zhe-Yang	en_US
dc.contributor.author	Huang, Che-Cheng	en_US
dc.contributor.author	Chen, Chun-Chieh	en_US
dc.contributor.author	Hung, Chung-Chih	en_US
dc.date.accessioned	2014-12-08T15:07:44Z	-
dc.date.available	2014-12-08T15:07:44Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0636-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6079	-
dc.description.abstract	This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.	en_US
dc.language.iso	en_US	en_US
dc.title	CMOS low-noise amplifier for mode-C & mode-D MB-OFDM UWB wireless receiver	en_US
dc.type	Article	en_US
dc.identifier.journal	EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS	en_US
dc.citation.spage	985	en_US
dc.citation.epage	988	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000254170700109	-
Appears in Collections:	Conferences Paper