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dc.contributor.authorHuang, Zhe-Yangen_US
dc.contributor.authorHuang, Che-Chengen_US
dc.contributor.authorChen, Chun-Chiehen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.date.accessioned2014-12-08T15:07:44Z-
dc.date.available2014-12-08T15:07:44Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0636-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/6079-
dc.description.abstractThis paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.en_US
dc.language.isoen_USen_US
dc.titleCMOS low-noise amplifier for mode-C & mode-D MB-OFDM UWB wireless receiveren_US
dc.typeArticleen_US
dc.identifier.journalEDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGSen_US
dc.citation.spage985en_US
dc.citation.epage988en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000254170700109-
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