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dc.contributor.authorShen, F. J.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:01:51Z-
dc.date.available2014-12-08T15:01:51Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2117-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/608-
dc.description.abstractEffect of passivation opening on electromigration in eutectic SnPb solder joints is investigated in this study. Solder bumps were fabricated with a polyimide (PI) and without a PI layer. Both sets of solder joints were subjected to electromigration tests by 0.8A at 150 degrees C. Kelvin probes were employed to monitor the increase in bump resistance during electromigration. The bump failure is defined when the bump resistance increase to 100% of its initial value. It is found that the failure time is different for the two joints and the failure occurs in different locations for the two joints. 3D simulation on current density is performed to examine the difference in current distribution for the two joints. It is found that the current density distribution plays key roles in the failure location of electromigration.en_US
dc.language.isoen_USen_US
dc.titleEffect of Passivation Opening on Electromigration in Eutectic SnPb Solder Jointsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalEPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3en_US
dc.citation.spage1154en_US
dc.citation.epage1159en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000265818600182-
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