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dc.contributor.authorChen, Chihen_US
dc.contributor.authorTong, H. M.en_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:07:45Z-
dc.date.available2014-12-08T15:07:45Z-
dc.date.issued2010en_US
dc.identifier.isbn978-0-8243-1740-9en_US
dc.identifier.issn1531-7331en_US
dc.identifier.urihttp://hdl.handle.net/11536/6094-
dc.identifier.urihttp://dx.doi.org/10.1146/annurev.matsci.38.060407.130253en_US
dc.description.abstractPb-free solders have replaced Pb-containing SnPb solders in the electronic packaging industry due to environmental concerns. Both electromigration (EM) and thermomigration (TM) have serious reliability issues for fine-pitch Pb-free solder bumps in the flip-chip technology used in consumer electronic products. We review the unique features of EM and TM in flip-chip solder bumps, emphasizing the effects of current crowding and joule heating. In addition, the challenges to a better understanding of EM and TM in Pb-free solders are discussed. For example, the anisotropic nature of Sn microstructure in Pb-free solders can enhance the dissolution rates of Ni and Cu in solders driven by EM and TM.en_US
dc.language.isoen_USen_US
dc.subjectmicroelectronic packagingen_US
dc.subjectdiffusionen_US
dc.subjectreliabilityen_US
dc.subjectcurrent stressingen_US
dc.subjectJoule heatingen_US
dc.subjectthermal gradienten_US
dc.subjectunderbump metallizationen_US
dc.titleElectromigration and Thermomigration in Pb-Free Flip-Chip Solder Jointsen_US
dc.typeReview; Book Chapteren_US
dc.identifier.doi10.1146/annurev.matsci.38.060407.130253en_US
dc.identifier.journalANNUAL REVIEW OF MATERIALS RESEARCH, VOL 40en_US
dc.citation.volume40en_US
dc.citation.spage531en_US
dc.citation.epage555en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000280818700021-
dc.citation.woscount79-
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