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dc.contributor.authorWang, Jui-Haoen_US
dc.contributor.authorLien, Shui-Yangen_US
dc.contributor.authorChen, Chia-Fuen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.date.accessioned2014-12-08T15:07:46Z-
dc.date.available2014-12-08T15:07:46Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2035141en_US
dc.identifier.urihttp://hdl.handle.net/11536/6108-
dc.description.abstractLarge-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 mu m and an intrinsic layer were grown without incubation. These techniques were employed to prepare large-grain poly-Si thin-film solar cells. An ITO/n-i-p (HWCVD)/p+ (AIC)/Ti/glass-structured poly-Si thin-film solar cell with an initial efficiency of 5.6% was obtained.en_US
dc.language.isoen_USen_US
dc.subjectAluminum-induced crystallization (AIC)en_US
dc.subjecthot-wire chemical vapor deposition (HWCVD)en_US
dc.subjectpolycrystalline silicon (poly-Si)en_US
dc.titleLarge-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVDen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2035141en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue1en_US
dc.citation.spage38en_US
dc.citation.epage40en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000273090800014-
dc.citation.woscount9-
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