Chemical Precursor for the Synthesis of Diamond Films at Low Temperature

doi:10.1143/APEX.3.045501

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DC 欄位	值	語言
dc.contributor.author	Tiwari, Rajanish N.	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2014-12-08T15:07:47Z	-
dc.date.available	2014-12-08T15:07:47Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1882-0778	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6117	-
dc.identifier.uri	http://dx.doi.org/10.1143/APEX.3.045501	en_US
dc.description.abstract	In this study, diamond films have been synthesized on adamantane-coated (100) Si substrates at 530 degrees C by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen. Scanning electron microscopy, Raman spectroscopy, and X-ray diffraction were employed to characterize the carbon chemical species on the Si substrate from adamantane into diamond. These measurements provide definitive evidence for formation of high-crystalline diamond film on Si substrate without any other pretreatments. Moreover, the possible mechanisms for the diamond formation are presented. (C) 2010 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Chemical Precursor for the Synthesis of Diamond Films at Low Temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/APEX.3.045501	en_US
dc.identifier.journal	APPLIED PHYSICS EXPRESS	en_US
dc.citation.volume	3	en_US
dc.citation.issue	4	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000277297000018	-
dc.citation.woscount	7	-
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