銻化鋁及砷銻化鋁成長研究

Abstract

In this study,we have investigated using metalorganic chemical vapor deposition(MOCVD) to grow AlSb and develop the dependence of solid composition of AlAsSbon the factors of themodynamics, growth rate,growth temperature and carrier flow rate.The experiment results indicate that arsenic solid composition of AlAsSb is proportional to molar flow rate of TBAs.This result is agreement with the themodynamic prediction.Otherwise,arsenic solid composition decreased as growthtemperature increased.We think this result might be related to association of TBAs and TMAl.Also,arsenic solid composition decreasedas growth rate and carrier flow rate increased.Growth rate increasedas growth temperature increased when growth temperature is below 625C and the activation energy is 16.1kcal/mole.In the study of AlSb,we first grow a buffer layer between substrate and epilayerin order to improve film quality and investigated variation of growth rate andfilm quality in different V-III ratio and growth temperature.Samples were characterized by means of Ramanspectrum measurement to understand the properties of this material.The experimentresults indicate that when the temperature is below 700C,the growth is kinetically controlled and the activation energy is 16.59kcal/mole.We find that catalysis might exist between TMAl and TMSb.The results of Raman spectrum and X- raydiffraction indicate that film quality is related to growth temperature and V-III ratio.