不同熱理條件下之 AgGaS2 單晶結構及特性研究

Abstract

In this study we disscuss the structure and characteristics of AgGaS2 single crystal under different annealing conditions. Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3 besides the phase of AgGaS2 is easily to be form ed as the precipitate during solidification. These precipitate need to be remo ved by thermal annealing ,otherwisethey will form the absorption centers and affect the optical propertiesof crystal seriously. In our experiment , we focus on five different thermal annealing conditions, such as to use materials of A g2S 、Ag、AgGaS2powder、Ga and S to obtain a crystal of better quality. we find that a betterquality of crystal can be obtain by annealing the crystal at tem peratureof 930C for 7 days under gas ambient of Ag2S.