Title: 氧氣微波電漿表面處理對五氧化二鉭薄膜性質改進之研究
The Effect of Oxygen Microwave Plasma Treatment on the Properties Tantalum Pentoxide Films
Authors: 楊連 聖
Young, Lan Sam
謝 宗 雍
T. H. Hsieh
材料科學與工程學系
Keywords: 五氧化二鉭;微波電漿;表面處理;Tantalum Pentoxide;Microwave Plasma;Surface Treament
Issue Date: 1996
Abstract: 本研究利用濺鍍(Sputtering)技術長成五氧化二鉭薄膜,探討氧
氣微波電漿表面改質技術(Oxygen Microwave Plasma Surface Treat-
ment)對提升薄膜品質及電性的可行性。 X-光繞射與歐傑能譜儀的
分析結果顯示,微波電漿表面改質處 理技術能使濺鍍長成的薄膜化學計
量比(Stoichiometric Ratio)更接近 五氧化二鉭;掃描式電子顯微鏡、
原子力顯微鏡與穿透式電子顯微 鏡對表面及內部微結構的觀察顯示微波
電漿處理能引發再配列及 氧化現象使原來柱狀晶粒間空隙獲得填補,並
使薄膜的表面粗糙度 降低約6.6倍;結構的緻密化同時改善了五氧化二
鉭薄膜的電性, 使崩潰電壓(Breakdown Voltage)提升了1至3.5倍。但
微波電漿處理 僅對較厚的試片提供改善,對厚度小於10nm的薄膜則因引
入過多 的佈植缺陷而使結構與電性同時劣化。
In this work we studied the oxygen microwave plasma
modification on structure and electrical properties of
tantalum pentoxide (Ta2O5) films deposited by magnetron
sputtering process. The x-ray and Auger electron
spectroscopy analyses (AES) revealed that the [O]/[Ta] ratio of
the films is much closer to exact stoichiometery after the
application of plasma treatment. The surface roughness and the
sizes of intergranular voids of plasma-treated Ta2O5 films were
effectively reduced, as observed by scanning electron
microscopy (SEM), atomic force micro-scopy (AFM) and cross-
sectional transmission electron microscopy (XTEM). The
plasma-induced structure densification was also beneficial to
the electrical properties of Ta2O5 films whose breakdown
voltages were improved up to 3.5 times, as indicated by
current-voltage (I-V) measurement. However, plasma modification
seemed to be effective to thicker Ta2O5 flims. For the Ta2O5
films of thickness less than 10nm, the plasma treatment would
result too many implanted defects which deteriorate both
structure and electrical properties of the films.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT850159010
http://hdl.handle.net/11536/61585
Appears in Collections:Thesis