標題: 低介電常數旋塗式玻璃薄膜之化學機械拋光特性研究
Chemical-Mechanical Polishing of Low Dielectric Constant Spin-On Glass Thin Films
作者: 張仕宗
Chang, Shih-Tzung
馮明憲, 戴寶通
Ming-Shiann Feng, Bau-Tong Dai
材料科學與工程學系
關鍵字: 化學機械拋光;旋塗式矽氧烷絕緣層;氧化鋯研漿;拋光選擇率;氫氧化四級胺;氧化矽水解反應;CMP;alkyl siloxane-based SOG;zirconia-based slurry;polish selectivity;tetra-alkyl substitute ammonium hydroxide;silica hydration reaction
公開日期: 1996
摘要: 化學機械拋光製程被公認為能夠達到全域平坦化最有效的方法。在本論文 中,我們對一系列的旋塗式玻璃薄膜做了詳細的探討,從表面性質及分子 鍵結的構造來對這些薄膜的特性能有深入的瞭解,同時我們也利用這些特 性進一步探討含有有機成份的旋塗式 玻璃薄膜在化學機械拋光過程中的 拋光機制。在本實驗中我們將不同有機成分含量的烷基矽氧烷為基底的旋 塗式玻璃薄膜使用氧化矽或氧化鋯為拋光液,在這些拋光液中加入不同添 加劑來評估這些薄膜的拋光結果,實驗結果發現,使用鹼性氧化矽水溶液 為拋光液的有機介電薄膜,其拋光速率很低,相反地,使用酸性氧化鋯溶 液為拋光液的有機介電薄膜,可以有效提高拋光速率。另外,我們也發現 在酸性氧化鋯溶液加入不同碳數的氫氧化四級銨,可選擇性提高有機成分 的介電薄膜之拋光速率而抑制不含有機成份的介電薄膜之拋光速率,亦即 調整氫氧化四級銨之加入量可改變製程所需的選擇率(1.2∼9.1)。對於 化學機械拋光後的這些薄膜,我們也發現其成份並沒有改變,顯示這些薄 膜適合於化學機械拋光的製程上應用。 Chemical-mechanical polishing (CMP) process has been proven to be the most promising method for accomplishing global planarization. In this study,chemical-mechanical polishing of spin-on glass (SOG) thin films are presented. Wettability, surface property and bonding structure of spin-on glasses are characterized in order to evaluate their correlations with CMPperformance. Alkylsiloxane-based spin-on glass (SOG) thin films with varying amounts of organic content were subjected to CMP using silica- and ZrO2-based slurries with a variety of additives. As the amount of organic content in SOG increases, removal rate dec reases with silica-based KOH-stabilized slurry. On the other hand, higher removal rates for both organic SOG and thermal oxide were obtained with ZrO2-based slurry than those obtained with SiO2-based slurry and adjustment in polish selectivity (relative to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl substitute ammonium hydroxide. Post-CMP SOG films characterized by Fourier-transform infrared (FTIR) spectroscopy and atomic force microscope (AFM) are moisture-resistant and chemically stable, thus can be considered to be CMP-compatible.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT850159019
http://hdl.handle.net/11536/61595
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