微細圓錐形鑽石場發射陣列的製作及特性研究

Abstract

近幾年來真空微電子科技以吸引許多研究者的興趣，特別是作為場效 平面顯示器用的場發射陣列元件。場發射陣列是利用一有微小尖錐陣列來 增加發射場電流，而此發射材料的外型和功函數或影響功函數的真空環境 ，都會改變整個發射場的發射功率。一般認為解決這個問題的關鍵在於如 何將矽和III-V族半導體化合物製成固態電子發射元件；而鑽石的(111)面 有負的電子親合力或非常小的電子親合力特性，使得鑽石成為最有潛力的 固態電子發射器材料。 在本論文中，我們利用偏壓輔助微波電漿化學 氣相沉積法，成功的製造出無摻雜和摻磷的圓錐形鑽石場發射陣列。將此 陣列放入10-5 Torr得高真空中，以ITO玻璃當陽極，矽晶片當陰極，兩電 極間距離50 um，則可測得場發射電流。結果，顯示在外加600 V下得 到0.3 mA的發射電流，由F-N函數圖的線性關係顯示這種鑽石陣列具有很 好的電子發射場效。 據作者所知、本論文是第一篇報導以CVD法 製造出微細圓錐形鑽石陣列的研究。 Field emitter devices fabricated by advanced microfabrication technologies are studied extensively as cathodes for vacuum microelectronic devices, such as filed emission displays(FED's). The development of field emitter array makes it possible for image display application. It integrates an array of microtips to increase the total emission current. Field emission is dependent upon the shape and work function of emitting material or vacuum environments which affects the work function. The key problem to be solved is the fabrication of the solid-state electron emission using both silicon and III-V compounds. Diamond was considered to be the most appropriate and probable candidate for the solid-state electron emitter, because diamond ( 111 ) has a negative or at least very small electron affinity. In this thesis, non-doped and phosphorus-doped diamond field emitter arrays have been successful fabricated using bias assisted microwave plasma chemical vapor deposition (BAMPCVD). The fabricated array was placed in a high vacuum pumping system with the pressure of ~ 10-5 Torr and the emission current as a function of the anode voltage was measured. The distance between the ITO glass anode and the device surface was held constant at 50 (m throughout the measurement. As a result, a current larger than 0.3 mA was obtained for an anode voltage of 600 V. A linear relationship in the Fowler-Nordheim plot indicated the existence of electron filed emission from the fabricated diamond field emitter array. This report is first to obtain a miniature-size cone-shaped diamond and conic diamond field emitter arrays by the fabrication technique of the bias assisted microwave plasma chemical vapor deposition.