Effect of CF(4) Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors

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DC 欄位	值	語言
dc.contributor.author	Chang, Chih-Pang	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:07:50Z	-
dc.date.available	2014-12-08T15:07:50Z	-
dc.date.issued	2010-01-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.3265989	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6175	-
dc.description.abstract	In this study, a CF(4) plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of CF(4) Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3265989	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	157	en_US
dc.citation.issue	2	en_US
dc.citation.spage	H192	en_US
dc.citation.epage	H195	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
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