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dc.contributor.authorLin, C. Y.en_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorChang, C. S.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorChien, F. S. -S.en_US
dc.date.accessioned2014-12-08T15:07:50Z-
dc.date.available2014-12-08T15:07:50Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6177-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3274825en_US
dc.description.abstractLocal conductance of a ZnO epifilm with a columnar-grain structure was studied by conductive-mode atomic force microscopy. The probe-ZnO junction at the grain boundary with high density edge threading dislocations (TDs) behaves as a Schottky contact while the junction at the epitaxial core behaves as an ohmic contact, resulting in the nonuniformity of conductance throughout the film. The calculated Schottky barrier is 0.4 +/- 0.025 eV. The point defects of doubly charged Zn vacancies accumulated at the edge TDs induce local band bending of ZnO, thus contributing to the Schottky nature at the grain boundary.en_US
dc.language.isoen_USen_US
dc.subjectatomic force microscopyen_US
dc.subjectedge dislocationsen_US
dc.subjectelectrical conductivityen_US
dc.subjectgrain boundariesen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectSchottky barriersen_US
dc.subjectsemiconductor epitaxial layersen_US
dc.subjectvacancies (crystal)en_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleEffect of Threading Dislocations on Local Contacts in Epitaxial ZnO Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3274825en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue3en_US
dc.citation.spageH268en_US
dc.citation.epageH271en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274321900074-
dc.citation.woscount2-
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