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dc.contributor.authorChang, Pei-Chien_US
dc.contributor.authorLai, Rui-Lingen_US
dc.contributor.authorLee, Chien-Yingen_US
dc.contributor.authorLin, Kao-Chaoen_US
dc.contributor.authorChen, Hsia-Weien_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorChang, Chia-Haoen_US
dc.contributor.authorHsu, Yu-Yingen_US
dc.contributor.authorChang, Chia Haoen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:07:51Z-
dc.date.available2014-12-08T15:07:51Z-
dc.date.issued2007en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/6179-
dc.description.abstractIn this report, the pillar-shaped carbon nanotubes (CNTs) have been achieved by utilizing an Fe-Ti codeposited layer as catalyst in thermal chemical vapor deposition system (T-CVD). By adjusting the ratio of distance between neighboring pillars (R) to the pillar height (H) as 2.5, the field emission characteristics can be effectively improved by reducing the screening effect. The turn-on field was remarkably decreased to 0.95 V/um with a very high current of 4.98mA for a device with area of 0.02cm(2). The coefficient of variation (CV) of the emission current was as low as 20.59% at 800V for 3600sec.en_US
dc.language.isoen_USen_US
dc.titlePillar-shaped carbon nanotubes by Ti-Fe codepositionen_US
dc.typeArticleen_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.citation.spage600en_US
dc.citation.epage603en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000258177700157-
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