標題: | Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method |
作者: | Chen, Wei-Yu Wang, Wei-Lin Liu, Jui-Min Chen, Chien-Cheng Hwang, Jenn-Chang Huang, Chih-Fang Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | bonds (chemical);diffusion;silicon compounds;stacking faults;transmission electron microscopy;twin boundaries;wide band gap semiconductors |
公開日期: | 2010 |
摘要: | The atomic arrangement and bonding characteristics of void-free 3C-SiC/Si(100) grown by the modified four-step method are presented. Without the diffusion step, Si-C bonds are partially formed in the as-carburized layer on Si(100). The ratio of C-C bonds to Si-C bonds is about 7:3, which can be lowered to about 1:9 after the diffusion step at 1350 degrees C for 5 min or at 1300 degrees C for 7 min according to C 1s core level spectra. The residual C-C bonds cannot be removed, which is associated with an irregular atomic arrangement (amorphous) located either at the 3C-SiC/Si(100) interface or at the intersection of twin boundaries in the 3C-SiC buffer layer based on the lattice image taken by transmission electron microscope. The diffusion step helps the formation of Si-C bonds more completely and results in a SiC buffer layer of high quality formed on Si(100) before the growth step. However, twins and stacking faults still appear in the 3C-SiC buffer layer after the diffusion step. The formation mechanism of the 3C-SiC buffer layer is proposed and discussed. |
URI: | http://hdl.handle.net/11536/6180 http://dx.doi.org/10.1149/1.3294700 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.3294700 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 157 |
Issue: | 3 |
起始頁: | H377 |
結束頁: | H380 |
顯示於類別: | 期刊論文 |