Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Shih-Pang | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Zhuo, Li-Fu | en_US |
dc.contributor.author | Jang, Chung-Ying | en_US |
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Yang, Hung-Chih | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:07:51Z | - |
dc.date.available | 2014-12-08T15:07:51Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6182 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3327909 | en_US |
dc.description.abstract | The low droop nonpolar m-plane InGaN/GaN light emitting diode (LED) has been fabricated and investigated. The external quantum efficiency for a 300x300 mu m square LED chip only drops about 18% from maximum at an operation current of 22 A/cm(2) (20 mA) to 330 A/cm(2) (300 mA) dc operations at room temperature. In addition, the internal quantum efficiency has been extracted by temperature-dependent photoluminescence measurements, and there is no droop observed as the carrier density increases. The small droop in efficiency of m-plane LEDs could be due to the lack of polarization effects that enhances the carrier confinement under high current density operation. The polarization anisotropy is clearly observed in the m-plane LED, and the degree of polarization is 68%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carrier density | en_US |
dc.subject | current density | en_US |
dc.subject | gallium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | indium compounds | en_US |
dc.subject | light emitting diodes | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | polarisation | en_US |
dc.subject | semiconductor quantum wells | en_US |
dc.subject | wide band gap semiconductors | en_US |
dc.title | Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3327909 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 157 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | H501 | en_US |
dc.citation.epage | H503 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000276555300059 | - |
dc.citation.woscount | 10 | - |
Appears in Collections: | Articles |
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