完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorZhuo, Li-Fuen_US
dc.contributor.authorJang, Chung-Yingen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorYang, Hung-Chihen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:07:51Z-
dc.date.available2014-12-08T15:07:51Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6182-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3327909en_US
dc.description.abstractThe low droop nonpolar m-plane InGaN/GaN light emitting diode (LED) has been fabricated and investigated. The external quantum efficiency for a 300x300 mu m square LED chip only drops about 18% from maximum at an operation current of 22 A/cm(2) (20 mA) to 330 A/cm(2) (300 mA) dc operations at room temperature. In addition, the internal quantum efficiency has been extracted by temperature-dependent photoluminescence measurements, and there is no droop observed as the carrier density increases. The small droop in efficiency of m-plane LEDs could be due to the lack of polarization effects that enhances the carrier confinement under high current density operation. The polarization anisotropy is clearly observed in the m-plane LED, and the degree of polarization is 68%.en_US
dc.language.isoen_USen_US
dc.subjectcarrier densityen_US
dc.subjectcurrent densityen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectlight emitting diodesen_US
dc.subjectphotoluminescenceen_US
dc.subjectpolarisationen_US
dc.subjectsemiconductor quantum wellsen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleLow Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3327909en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue5en_US
dc.citation.spageH501en_US
dc.citation.epageH503en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000276555300059-
dc.citation.woscount10-
顯示於類別:期刊論文


文件中的檔案:

  1. 000276555300059.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。